Phosphors for Radiation Detectors. Группа авторов

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Название Phosphors for Radiation Detectors
Автор произведения Группа авторов
Жанр Отраслевые издания
Серия
Издательство Отраслевые издания
Год выпуска 0
isbn 9781119583387



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rel="nofollow" href="#ulink_bc907f1f-58bc-5017-9294-a5ac0cda9280">Equation (1.5), and the average energy consumed per electron–hole pair can be expressed as ξ = Eg(2.3 + 1.5 K). Under this condition, the parameter β is approximated to

      (1.13)equation

      The number of electron–hole pairs is

      (1.14)equation

      Thus we can obtain

      Generally, experimental evaluations of effects of optical phonon (thermal) loss is difficult. For experimental research a very convenient model assuming βs = 2.5 is proposed, based on the data of various scintillators [59], and most research uses this formula which is described as

      The following topics are limited to photon counting‐type detectors, since integration‐type detectors cannot measure the energy of ionizing radiation, except in some special cases. The scintillation light yield is one of the most important properties of scintillation detectors because it directly relates to the energy resolution. Generally, the energy resolution obeys Poisson statistics. If we represent the quantum efficiency of the photodetector as q, the number of electron–hole pairs after photodetector output n is a product of q and the number of scintillation photons. The energy resolution under the absorbed energy of E is expressed as

      (1.17)equation

      Therefore, we can obtain a better energy resolution in bright scintillators. In actual detectors, the energy resolution is different from the resolution derived from simple Poisson statistics, and the gap between actual dispersion of 𝑛 and dispersion of 𝑛 in Poisson distribution is called the Fano factor (F). By using the Fano factor, the limit of the energy resolution of actual detectors is expressed as

      (1.18)equation

      In semiconductor, gas, and scintillation detectors, F is ~0.1, 0.1–0.4, and 1, respectively. Therefore, semiconductor detectors such as Si, Ge, and CdTe are known to have a superior energy resolution compared to scintillation detectors, and the best energy resolution so far is ~2% at 662 keV [60, 61]. In practical detectors, energy resolution is not only affected by statistics but also by non‐uniformity of the scintillator. Especially in luminescence center doped scintillators, because we generally use bulky larger material to interact with ionizing radiations effectively, non‐uniform distribution of dopant ions cannot be avoided. The non‐uniform distribution causes differences of light output at each point on the scintillator, and in such a case, the photoabsorption peak or some other features caused by ionizing radiation become, for example, a superposition of multiple Gaussian. Eventually, the shape of the peak in the pulse height spectrum becomes broad, and the energy resolution becomes worse. Such a non‐uniformity is also observed in photodetectors, and the energy resolution observed in practical detectors depends on the non‐uniform response of scintillators and photodetectors.

      (1.19)equation

      where δsc, δcir, and δst represent the intrinsic energy resolution, resolution due to circuit noise, and resolution expected by Poisson statistics, respectively. In pulse height spectrum, we observe ΔE/E directly, and we can estimate δst by the number of scintillation photons and the quantum efficiency of the photodetector. The circuit noise δcir can be directly estimated by the injection of a test pulse into the electrical circuit. Thus, we can calculate δsc by the subtraction of δst